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Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths

Published online by Cambridge University Press:  21 March 2011

James R. Sites
Affiliation:
Department of Physics, Colorado State University, Fort Collins, CO 80523-1875
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Abstract

An apparatus developed recently at Colorado State University utilizes a diffractionlimited optics system and a high-resolution translation system to measure the laser-induced photocurrent at resolutions of 1 μm and equivalent incident laser intensities of 1 sun (100 mW/cm2). Multiple lasers in the 635-830 nm range can be easily selected by changing the fiberoptic connectors. The spot profile and location are unchanged when different lasers are selected. In addition, a laser temperature tuned through the 825-857 nm range allows measurement of local variations in the quantum efficiency near the CdTe band gap, which track intermixing of CdS/CdTe. This capability extends the previous analysis, which includes the separation of series resistance and shunting effects. The effect of post-deposition processing and elevated temperature stress on local variations in electrical and optical parameters, especially using the near-bandgap wavelengths, are examined using a series of samples fabricated at NREL.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Hiltner, J.F. and Sites, J.R., Proc. of the 28th IEEE PVSC (2000).Google Scholar
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