Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-559fc8cf4f-6pznq Total loading time: 0.322 Render date: 2021-03-05T04:31:49.726Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films

Published online by Cambridge University Press:  04 February 2014

Ze Jia ,
Jianlong Xu ,
Xiao Wu ,
Mingming Zhang ,
Naiwen Zhang ,
Jizhi Liu ,
Zhiwei Liu  and
Juin J. Liou
Ze Jia
Affiliation:
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
Jianlong Xu
Affiliation:
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, 100084, China
Xiao Wu
Affiliation:
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
Mingming Zhang
Affiliation:
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, 100084, China
Naiwen Zhang
Affiliation:
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, 100084, China
Jizhi Liu
Affiliation:
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
Zhiwei Liu
Affiliation:
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
Juin J. Liou
Affiliation:
Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816, USA
Corresponding
E-mail address:
ze.jia@ieee.org
Get access

Abstract

Different ferroelectric thin films and their related Metal-Semiconductor-Insulator-Metal (MSIM) structures include zinc oxide (ZnO) are studied, which can be utilized in back-gated ferroelectric field-effect transistors (FETs). The most ideal zinc oxide (ZnO) thin film prepared by sol-gel method are obtained under the pyrolysis temperature of 400°C and the annealing temperature of 600°C. The asymmetric or symmetric current-voltage characteristics of the heterostructures with ZnO are exhibited depending on different ferroelectric materials in them. The curves of drain current versus gate voltage for MSIM-structure FETs are investigated, in which obvious counterclockwise loops and a drain current switching ratio up to two orders of magnitude ate observed due to the modulation effect of remnant polarization on the channel resistance. The results also indicate the positive influences of impurity atom substitution in bismuth ferrite thin film for the MSIM-structure FETs.

Keywords

ferroelectric dopant sol-gel
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 131 - 137
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

Lu, D.D., Dunga, M.V., Lin, C.H., Niknejad, A.M. and Hu, C.M., Solid-State Electron. 62 (1), 31 (2011).CrossRef
Yang, I.Y., Vieri, C., Chandrakasan, A. and Antoniadis, D.A., IEEE Trans. Electron Devices 44 (5), 822 (1997).CrossRef
Chen, H.P., Lee, V.C., Ohoka, A., Xiang, J. and Taur, Y., IEEE Trans. Electron Devices 58 (8), 2401 (2011).CrossRef
Fu, W.Y., Xu, Z., Bai, X.D., Gu, C.Z. and Wang, E., Nano Lett. 9 (3), 921 (2009).CrossRef
Jia, Z., Zhang, M.M. and Ren, T.L., Ferroelectrics. 421 (1), 92 (2011).CrossRef
Zhang, N.W., Jia, Z., Zhang, M.M. and Ren, T.L., Mater. Res. Soc. Proc. 1368 (1), (2011).CrossRef
Xu, J.L., Jia, Z., Zhang, N.W. and Ren, T.L., J. Appl. Phys. 111 (7), 074101 (2012).CrossRef
Ryu, Y., Lee, T.S., Lubguban, J.A., White, H.W., Kim, B.J., Park, Y.S. and Youn, C.J., Appl. Phys. Lett. 88 (24), 241108 (2006).CrossRef
Kim, I.D., Choi, Y.W. and Tuller, H.L., Appl. Phys. Lett. 87 (4), 043509 (2005).CrossRef
Pintilie, L., Dragoi, C., Radu, R., Costinoaia, A., Stancu, V. and Pintilie, I., Appl. Phys. Lett. 96 (1), 012903 (2010).CrossRef
Kato, Y., Kaneko, Y., Tanaka, H. and Shimada, Y., Jpn. J. Appl. Phys. 47, 2719 (2008).CrossRef
Jia, Z., Ren, T.L., Zhang, Z.G., Liu, T.Z., Wen, X.Y., Hu, H. and Liu, L.T., J. Phys. D: Appl. Phys. 39 (12), 2587 (2006).CrossRef
Zhang, M.M., Jia, Z. and Ren, T.L., Solid-State Electron. 53 (5), 473 (2009).CrossRef
Jia, Z., Ren, T.L., Liu, T.Z., Hong, H.U., Zhang, Z.G., Xie, D. and Liu, L.T., Chin. Phys. Lett. 23 (4), 1042 (2006).CrossRef
Choi, T., Lee, S., Choi, Y.J., Kiryukhin, V. and Cheong, S.W., Science. 324 (5923), 63 (2009).CrossRef
Catalan, G. and Scott, J.F., Adv. Mater. 21 (24), 2463 (2009).CrossRef
Uchida, H., Ueno, R., Funakubo, H. and Koda, S., J. Appl. Phys. 100 (1), 014106 (2006).CrossRef
Yun, K.Y., Noda, M. and Okuyama, M., J. Korean Phys. Soc. 42, 1153 (2003).
Palkar, V.R., John, J. and Pinto, R., Appl. Phys. Lett. 80 (9), 1628 (2002).CrossRef
Wang, Y.P., Zhou, L., Zhang, M.F., Chen, X.Y., Liu, J.M. and Liu, Z.G., Appl. Phys. Lett. 84, 1731 (2004).CrossRef
Qi, X.D., Dho, J., Tomov, R., Blamire, M.G. and MacManus-Driscoll, J.L., Appl. Phys. Lett. 86 (6), 062903 (2005).CrossRef

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 5th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *