Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Parsons, Gn
Tsu, Dv
and
Lucovsky, G
1988.
Chemical Reaction Pathways for the Deposition of Amorphous Silicon-Hydrogen Alloys by Remote Plasma Enhanced CVD.
MRS Proceedings,
Vol. 131,
Issue. ,
Prasad, Kshem
Finger, F.
Curtins, H.
Shah, A.
and
Bauman, J.
1989.
Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD Technique.
MRS Proceedings,
Vol. 164,
Issue. ,
Shimizu, Isamu
Hanna, Jun-Ichi
and
Shirai, Hajime
1989.
Control of Chemical Reactions for Growth of Crystalline Si at Low Substrate Temperature.
MRS Proceedings,
Vol. 164,
Issue. ,
Vepřek, Stan
1989.
Chemistry and Solid State Physics of Microcrystalline Silicon.
MRS Proceedings,
Vol. 164,
Issue. ,
Saxena, N.
Fortmann, C. M.
and
Russell, T. W. F.
1989.
Microcrystallinity in a-Si & a-SiC Films Made by Hg-Sensitized Photo-CVD.
MRS Proceedings,
Vol. 149,
Issue. ,
Ziegler, Y.
Curtins, H.
Baumann, J.
and
Shah, A.
1989.
VHF-GD a-Si:H Films Prepared at Very Low Temperature.
MRS Proceedings,
Vol. 149,
Issue. ,
Aljishi, Samer
Jin, Shu
Stutzmann, Martin
and
Ley, Lothar
1989.
Electronic and Structural Characterization of the Near Surface Layer and the Bulk in νc-Si:H Prepared with Hydrogen dilution.
MRS Proceedings,
Vol. 164,
Issue. ,
Veprek, S.
Heintze, M.
Bayer, R.
and
Jurčik-Rajman, N.
1989.
From the Understanding of the Reaction Mechanism Towards Optimizing the Deposition Rate and Optoelectronic Properties of a-Si:H.
MRS Proceedings,
Vol. 149,
Issue. ,
Vepřek, S.
1989.
Preparation of inorganic materials, surface treatment, and etching in low pressure plasmas: Present status and future trends.
Plasma Chemistry and Plasma Processing,
Vol. 9,
Issue. S1,
p.
29S.
Bustarret, Etienne
and
Hachicha, M.A.
1989.
A Discussion of Electronic Optical Absorption Spectra of Nanocrystalline Silicon thin Films.
MRS Proceedings,
Vol. 164,
Issue. ,
Asano, A.
1990.
Effects of hydrogen atoms on the network structure of hydrogenated amorphous and microcrystalline silicon thin films.
Applied Physics Letters,
Vol. 56,
Issue. 6,
p.
533.
Hsu, T.
Breaux, L.
Anthony, B.
Banerjee, S.
and
Tasch, A.
1990.
Defect microstructure in low temperature epitaxial silicon grown by RPCVD.
Journal of Electronic Materials,
Vol. 19,
Issue. 4,
p.
375.
Vepřek, Stan
and
Vepřek-Heijman, Maritza G. J.
1990.
Possible contribution of SiH2 and SiH3 in the plasma-induced deposition of amorphous silicon from silane.
Applied Physics Letters,
Vol. 56,
Issue. 18,
p.
1766.
VEPŘEK, S.
1990.
Metallurgical Coatings and Thin Films 1990.
p.
154.
Vepřek, S.
1990.
Surface processes and rate-determining steps in plasma-induced chemical vapour deposition: Titanium nitride, boron carbide and silicon.
Surface and Coatings Technology,
Vol. 43-44,
Issue. ,
p.
154.
Akihisa Matsuda
Katsuhiko Nomoto
Yoshiaki Takeuchi
Atsushi Suzuki
Akimasa Yuuki
and
Perrin, Jérôme
1990.
Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon.
Surface Science,
Vol. 227,
Issue. 1-2,
p.
50.
Vepřek, S.
and
Heintze, M.
1990.
The mechanism of plasma-induced deposition of amorphous silicon from silane.
Plasma Chemistry and Plasma Processing,
Vol. 10,
Issue. 1,
p.
3.
Fang, M.
and
Drévillon, B.
1991.
In situ spectroellipsometry study of the nucleation and growth of microcrystalline silicon.
Journal of Applied Physics,
Vol. 70,
Issue. 9,
p.
4894.
Vepřek, Stan
and
Vepřek-Heijman, Maritza G. J.
1991.
Open questions regarding the mechanism of plasma-induced deposition of silicon.
Plasma Chemistry and Plasma Processing,
Vol. 11,
Issue. 3,
p.
323.
Nakata, Masami
Sakai, Akira
Uematsu, Takuya
Namikawa, Tatsuru
Shirai, Hajime
Hanna, Jun Ichi
and
Shimizu, Isamu
1991.
Control of nucleation and growth in the preparation of crystals by plasma-enhanced chemical vapour deposition.
Philosophical Magazine B,
Vol. 63,
Issue. 1,
p.
87.