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Mechanisms of cross-talk in large area a-Si:H continuous image sensors

Published online by Cambridge University Press:  17 March 2011

J. P. Lu
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
S. E. Ready
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
K. Van Schuylenbergh
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
J. Ho
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
R. Lau
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
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Abstract

We report studies of the image-blur effects caused by lateral cross-talk between neighboring pixels of large-area amorphous silicon (a-Si:H) image sensors. The lateral conduction is attributed to three effects: conduction along the interface between the a-Si:H film and the underlying passivation; field-dependent electron injection at the edge of the sensor; and a field enhancement of the interface conduction due to the bias applied to the address lines. We show that the cross-talk can be controlled by choice of the operating conditions and optimization of the materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

[1] Mulato, M., Lemmi, F., Lau, R., Lu, J. P., Ho, J., Ready, S. E., Rahn, J. T., and Street, R. A., The Physics of Medical Imaging, Proc. SPIE, Vol. 3977, 26 (2000).Google Scholar
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