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The Mechanism of Haze and Defectivity Reduction in a New Generation of High Performance Silicon Final Polishing Slurries
Published online by Cambridge University Press: 01 February 2011
Abstract
The mechanism of haze reduction during silicon polishing using a new generation of additives has been explored. These additives are thought to decrease haze by adsorbing to the wafer surface and increasing the activation energy of the reaction between the silanolates on the silica particle surface with the surface silicon. This leads to greater selectivity between the peaks and valleys resulting in a net decrease in surface roughness.
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- Copyright © Materials Research Society 2010
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