Published online by Cambridge University Press: 15 February 2011
BaTiO3 thin films, 50–60 nm in thickness, were evaporated in Ultra High Vacuum as well as under 1 mPa O2 pressure onto Si/SiO2 (30 nm) wafers. The substrate temperature during the evaporations was approximately 70 °C. The films were flash annealed in oxygen at 500 °C. The interfacial reactions were studied by XPS and AES Ar ion assisted depth profiling, and by RBS. Interdiffusion took place even at 70 °C. The XPS/AES depth profiles suggested strong interdiffusion, with Ba being the dominant moving species. The SiO2/BaTiO3 interface smears out with significant Ba concentrations up to half of the SiO2 thickness. Ti diffusion is remarkably lower. Barium is detected up to the SiO2/Si interface.
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