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Materials Characterization using THz Ellipsometry

Published online by Cambridge University Press:  31 January 2011

Tino Hofmann ,
Craig M. Herzinger ,
John A. Woollam  and
Mathias Schubert
Tino Hofmann
Affiliation:
thofmann@engr.unl.edu, University of Nebraska-Lincoln, Electrical Engineering, Lincoln, Nebraska, United States
Craig M. Herzinger
Affiliation:
cherzinger@jawoollam.com, J.A. Woollam Co., Inc., Lincoln, Nebraska, United States
John A. Woollam
Affiliation:
jwoollam@jawoollam.com, J.A. Woollam Co., Inc., Lincoln, Nebraska, United States
Mathias Schubert
Affiliation:
schubert@engr.unl.edu, University of Nebraska-Lincoln, Electrical Engineering, Lincoln, Nebraska, United States
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Abstract

We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm−3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.

Keywords

thin filmSioptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1163: Symposium K – Materials Research for Terahertz Technology Development , 2009 , 1163-K08-04
Copyright
Copyright © Materials Research Society 2009

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