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Major Improvement of Intrinsic a-Si:H Films for Solar Cell Applications
Published online by Cambridge University Press: 01 January 1993
Abstract
The combination of a carefully-designed deposition system, process optimization, and a proprietary processing technique, has resulted in reduced structural defects and photo-stable, high quality intrinsic a-Si films. The improvement in material properties is further evidenced by successful incorporation of the material into single junction devices with a record stabilized device efficiency of 7.5%.
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- Research Article
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- Copyright © Materials Research Society 1993
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