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Low-Temperature Growth of Epitaxial Semiconductor Nanostructures and Films

Published online by Cambridge University Press:  23 March 2011

Alp T. Findikoglu
Affiliation:
MPA-STC, Los Alamos National Laboratory, MS T004, Los Alamos, NM 87545, U.S.A.
Daniel E. Perea
Affiliation:
MPA-CINT, Los Alamos National Laboratory, MS K771, Los Alamos, NM 87545, U.S.A.
S. T. Picraux
Affiliation:
MPA-CINT, Los Alamos National Laboratory, MS K771, Los Alamos, NM 87545, U.S.A.
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Abstract

The growth of epitaxial semiconductor nanostructures and films at low temperatures is important for semiconductor technology because it allows the possibility of monolithically integrating different high-performance single-crystalline semiconductor structures directly onto low cost technologically important substrates. At sufficiently low temperatures this can enable, for example, Si or Ge device fabrication on flexible substrates such as plastics. We have studied the reduced-temperature liquid-mediated growth of Ge nanostructures and films on crystalline template layers on non-single-crystalline substrates in a low-pressure chemical vapor deposition (LPCVD) system. The heteroepitaxial process is implemented by the Au seeded vapor-liquidsolid (VLS) catalytic growth technique with germane below 400 ºC. Crystalline template layers were prepared with ion-beam-assisted-deposition (IBAD) texturing and electron-beam evaporation on glass substrates. A thin layer of e-beam evaporated Au forms the catalyst layer, upon which we grew Ge films at 386 ºC. Scanning electron microscopy and x-ray diffraction results indicated that both Ge islands and nanowires grew heteroepitaxially on the crystalline template layers on glass substrates with good alignment over large areas.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

1. Schmidt, V., Wittemann, J. V., Senz, S., and Gosele, U., “Silicon Nanowires: A review on aspects of their growth and their electrical properties,” Adv. Mater. 21, 2681 (2009).CrossRefGoogle Scholar
2. Liquid Phase Epitaxy of Electronic, Optical, and Optoelectronic Materials, Eds. Capper, P. and Mauk, M., (Chichester, J. Wiley &Sons, 2001).Google Scholar
3. Findikoglu, A. T. and Matias, V., “Biaxially-oriented film on flexible polymeric substrate,” US Patent 7, 601,430.Google Scholar
4. Silicon and Germanium Nanowires: Growth, Properties and Integration (Invited Review), S. T. Picraux, S. Dayeh, P. Manandhar D. E. Perea and S. G. Choi, J. of Metals 62, (4) 35(2010).Google Scholar

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