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Low-Temperature Deposition and Characterization of AlxIn1-xN Thin Films

Published online by Cambridge University Press:  10 February 2011

Guohua Qiu
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE19716
J. O. Olowolafe
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE19716
Tao Peng
Affiliation:
Material Science Program, University of Delaware, Newark, DE19716
K. M. Unruh
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE19716
C. P. Swann
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE19716
J. Piprek
Affiliation:
Material Science Program, University of Delaware, Newark, DE19716
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Abstract

Thin III-V nitride semiconductors fidms are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800–1000°C) for the films to grow epitaxially. In the present work, we deposited AlxIn1-xN films on Si substrates by reactive magnetron sputttering method at low substrate temperature. The properties of the films have been studied by RBS, x-ray diffraction, and optical measurements. The AlxIn1-xN films deposited at room temperature were confirmed to be crystalline by x-ray diffraction. Band gap energies of our AlxIn1-xN alloys varies from 1.9 ev to 4.2 ev The bandgap energy vs. lattice constant curve was constructed and confirmed to bow downwards.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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