Skip to main content Accessibility help
×
Home
Hostname: page-component-55597f9d44-n4bck Total loading time: 0.331 Render date: 2022-08-12T21:33:39.443Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true } hasContentIssue true

Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films

Published online by Cambridge University Press:  15 February 2011

David M. Hoffman
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204
Lauren M. Atagi
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204 Los Alamos National Laboratory, Los Alamos, NM 87545
Wei-Kan Chu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston TX 77204
Jia-Rui Liu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston TX 77204
Zongshuang Zheng
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston TX 77204
Rodrigo R. Rubiano
Affiliation:
Department of Nuclear Engineering, MIT, Cambridge, MA 02139 current address: Raychem Corporation, MS 109/6503, 300 Constitution Dr., Menlo Park, CA 94025.
Robert W Springer
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
David C. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
Get access

Abstract

Depositions of high quality SiO2 and SnO2 films from the reaction of homoleptic amido precursors M(NMe2)4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition reactor. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450 °C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 ± 5 atom °. They are deposited with growth rates from 380 to 900 Å/min. The refractive indexes of the SiO2 films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm−1. X-Ray diffraction studies reveal that the SiO2 film deposited at 350°C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO2 films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10−2 to 10−3 Ω cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350°C is crystalline cassitterite with some (101) orientation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

2. Kern, W., Rosler, R.S., J. Electrochem. Soc. 14, 1082 (1977). W. Kern, G.L. Schnable, A.W. Fisher, RCA Review 37, 3 (1976).Google Scholar
3. Vossen, J.L., Physics of Thin Films 9, 1 (1977). Z.M. Jarzebski, Phys. Stat. Sol. A 71, 13 (1982). K.L. Chopra, S. Major, D.K. Pandya, Thin Solid Films 102, 1 (1983).Google Scholar
4. D.M. Hoffman, Polyhedron, in press. Fix, R.M., Gordon, R.G., Hoffman, D.M., Mat. Res. Soc. Symp. Proc. 168, 357 (1990); J. Am. Chem. Soc. 112, 7833 (1990).CrossRefGoogle Scholar
5. Deposition of TaOx from Ta(NMe2)5 has been reported: Tabuchi, T., Sawado, Y., Uematsu, K., Koshiba, S., Jpn. J. Appl. Phys. 30, L1974 (1991).CrossRefGoogle Scholar
6. The CVD of silicon oxide from Si(NMe2)4 with oxygen/ozone or oxygen has been reported. Only IR spectroscopy was used to characterize the films. Maruyama, T., Shirai, T., Appl. Phys. Lett. 63, 611 (1993).CrossRefGoogle Scholar
7. Portions of this work have been published. Atagi, L.M., Hoffman, D.M., Liu, J.-R., Zheng, Z., Chu, W.-K., Rubiano, R.R., Springer, R.W., Smith, D.C., Chem. Mater., in press.Google Scholar
8. Gordon, R.G., Hoffman, D.M., Riaz, U., Chem. Mater. 4, 68 (1992). R.G. Gordon, D.M. Hoffman, U. Riaz, Chem. Mater. 2, 480 (1990). K. Jones, M. F. Lappert, J. Chem. Soc. 1944 (1965).CrossRefGoogle Scholar
9. Adachi, M., Okuyama, K., Tohge, H., Shimada, M., Satoh, J., Muroyama, M., Jpn. J. Appl. Phys. 31, L1439 (1992).CrossRefGoogle Scholar
10. Desu, S.B., Peng, C.H., Shi, T., Agaskar, P.A., J. Electrochem. Soc. 139, 2682 (1992).CrossRefGoogle Scholar
11. Zarzebski, Z.M., Marton, J.P., J. Electrochem. Soc. 123, 333c (1976).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *