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Long-Range Diffusion of Transition Metals in Silicon During Rapid Thermal Annealing
Published online by Cambridge University Press: 25 February 2011
Abstract
A detailed comparison between transition metal diffusion results in silicon during rapid thermal annealing obtained in this and other studies with the diffusivity and solubility results obtained in the literature has been made. Using secondary ion mass spectroscopy, U-shaped diffusion profiles, possibly denoting amphoteric diffusion, have been noted fo Cu, Ni, and Pd in silicon during short anneals. Applications are reviewed.
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- Copyright © Materials Research Society 1989
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