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Localized States in a-S1-x Cx: H and a-Si1−xN.:H Elucidated From LESR and CPM

Published online by Cambridge University Press:  26 February 2011

Tatsuo Shimizu
Affiliation:
Department of Electronics, Facultyi of Technology, Kanazawa Universiht, Kanazawa 920, JAPAN
Hideo Kidoh
Affiliation:
Department of Electronics, Facultyi of Technology, Kanazawa Universiht, Kanazawa 920, JAPAN
Xixiang Xu
Affiliation:
Department of Electronics, Facultyi of Technology, Kanazawa Universiht, Kanazawa 920, JAPAN
Akiharu Morimoto
Affiliation:
Department of Electronics, Facultyi of Technology, Kanazawa Universiht, Kanazawa 920, JAPAN
Minoru Kumeda
Affiliation:
Department of Electronics, Facultyi of Technology, Kanazawa Universiht, Kanazawa 920, JAPAN
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Abstract

We have carried out combined measurements of dark ESR, light-induced ESR and low photon energy absorption by Constant Photocurrent Method (CPM) for various thickness a-Si:H, a-Si1-x-.Nx Cx.:H and a-Si1-x-.Nx:H films. As a result, both the surface density of dangling bonds in the disordered surface layer and the density of dangling bonds in the bulk region were obtained discriminating the neuttal and charged dangling bonds. In a-Si:H, it is found that a large fraction of dangling bonds is charged ones. The incorporation of C decreases and the incorporation of N increases the fraction of charged ones. It is concluded from the present result that charged defects in a-Si1-xNx,:H are pairs of N+4and Si-3. It is possible that charged defects in a-Si:H originate from a small amount of N contamination.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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