Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-18T21:31:54.642Z Has data issue: false hasContentIssue false

Localized Charge Trapping Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Salicide Buried Bitlines

Published online by Cambridge University Press:  01 February 2011

Torsten Mueller
Affiliation:
Torsten.Mueller1@qimonda.com, Qimonda Dresden GmbH & Co. OHG, Flash Technology Development, Koenigsbruecker Strasse 180, Dresden, 01099, Germany, +49 351 886 7913, +49 351 886 6996
C. Kleint
Affiliation:
Christoph.Kleint@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
C. Fitz
Affiliation:
Clemens.Fitz@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
M. Isler
Affiliation:
Mark.Isler@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
S. Riedel
Affiliation:
Stephan.Riedel@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
J.-U. Sachse
Affiliation:
Jens-Uwe.Sachse@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
D. Olligs
Affiliation:
Dominik.Olligs@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
H. Boubekeur
Affiliation:
Hocine.Boubekeur@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
F. Heinrichsdorf
Affiliation:
Frank.Heinrichsdorf@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
V. Polei
Affiliation:
Veronika.Polei@infineon.com, Infineon Technologies, Dresden, 01099, Germany
D. Pritchard
Affiliation:
David.Pritchard@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
M. Verhoeven
Affiliation:
Martin.Verhoeven@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
L. Lattard
Affiliation:
Ludivic.Lattard@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
M. Markert
Affiliation:
Matthias.Markert@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
C. Schupke
Affiliation:
Christin.Schupke@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden, 01099, Germany
B. Tippelt
Affiliation:
Birgit.Tippelt@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden 01099, Germany
S. Teichert
Affiliation:
Steffen.Teichert@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden 01099, Germany
R. Reisdorf
Affiliation:
Ralf.Reisdorf@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden 01099, Germany
C. Ludwig
Affiliation:
Christoph.Ludwig@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden 01099, Germany
E.G. Stein v. Kamienski
Affiliation:
Elard.Stein@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden 01099, Germany
T. Mikolajick
Affiliation:
Thomas.Mikolajick@ikw.tu-freiberg.de, Qimonda, Koenigsbruecker Strasse 180, Dresden 01099, Germany
N. Nagel
Affiliation:
Nicolas.Nagel@qimonda.com, Qimonda, Koenigsbruecker Strasse 180, Dresden 01099, Germany
Get access

Abstract

A 63nm Twin Flash memory cell with a size of 0.0225μm2 per 2 (or 4) bits is presented. To achieve small cell areas, a buried bit line and an aggressive gate length of 100 nm are the key features of this cell together with a minimum thermal budget processing. A novel epitaxial CoSi2 process allows the salicidation of local buried bitlines with only a few tens of nanometer width.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Eitan, B. et al., IEEE Elect. Dev. Lett. 21, 543 (2000).Google Scholar
2. Nagel, N. et al., Int. Symp. on VLSI Tech., Syst., and Appl. (TSA), accept. for publ. (2007).Google Scholar
3. Nagel, N. et al., VLSI Tech. Symp., Kyoto 7B–3 (2005).Google Scholar
4. Kittl, J. A. et al., Appl. Phys. Lett. 67, (1995), 2308.Google Scholar
5. Tung, R. T., Appl. Phys. Lett., 72 (1998) 2538.Google Scholar
6. Xiao, Z. G. et al., MRS Soc. Proc. 202 (1991) 101.Google Scholar
7. Dass, M. L. A. et al., Appl. Phys. Lett. 58, (1991), 1308.Google Scholar
8. Sun, J. J. et al., IEEE Trans. Elect. Dev. 45 (1998) 1946.Google Scholar
9. Perniola, L. et al., IEEE Int. Elect. Dev. Meet. 2005.Google Scholar
10. Hagenbeck, R. et al., IEEE Int. Conf. on Sim. of Semicond. Proc. and Dev. 2006.Google Scholar