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Local Order of Te Impurity Atoms in Heavily Doped GaAs:Te and Accompanying Electron Localization Effect

Published online by Cambridge University Press:  10 February 2011

T. Slupinski  and
E. Zielinska-Rohozinska
T. Slupinski
Affiliation:
Inst. of Experimental Physics, Warsaw University, Hoza 69, 00–681, Warsaw, Poland, tomslu@fuw.edu.pl
E. Zielinska-Rohozinska
Affiliation:
Inst. of Experimental Physics, Warsaw University, Hoza 69, 00–681, Warsaw, Poland, tomslu@fuw.edu.pl
Corresponding
E-mail address:
tomslu@fuw.edu.pl
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Abstract

We show the results of joined studies of the free electron concentration and x-ray diffuse scattering from heavily doped GaAs:Te single crystal as a function of controlled annealings at high temperatures 700–1200°C and Te concentration 1018− 2 1019 cm−3 from the range, where the free electron concentration saturates. Changes of electron concentration caused by annealings are accompanied by structural changes, both being in a high coincidence and reversible versus annealing temperature On a basis of the microscopic model of x-ray diffuse scattering from a solid solution, newly proposed here, we argue that impurity atom pairs arise, locally in a crystal, when the free electron concentration is lowered by annealing. We suppose that the electron localization is caused by impurity atom pairs, supporting recently published results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 261
Copyright
Copyright © Materials Research Society 2000

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Footnotes

*

present address: Kanagawa Academy of Sci. and Technol., KSP Build., 3–2–1 Sakado, Kawasaki. Japan

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