No CrossRef data available.
Article contents
Lateral InxGa1−x, P Heterostructures Obtained by Single Step Growth on Pre-Patterned Substrate by Chemical Beam Epitaxy
Published online by Cambridge University Press: 10 February 2011
Abstract
We present an investigation on the spatial compositional variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. Neighboring regions with 190 meV bandgap discontinuity are observed with the growth at 500°C. The development of laser structures on V-grooves that incorporate these lateral heterostructures is achieved by controlling the growth temperature during growth
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1999