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Laser Direct Writing of Aluminum

Published online by Cambridge University Press:  26 February 2011

T. Cacouris
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
G. Scelsi
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R. Scarmozzino
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R.M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R.R. Krchnavek
Affiliation:
Bell Communications Laboratories, 435 South Str., Morristown, N.J. 07960
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Abstract

We report, for the first time, laser direct writing of high conductivity aluminum interconnects from dimethylaluminum hydride (DMALH). These lines were deposited from a metallorganic gas with a focused deep-UV laser beam and were directly connected to aluminum test structures. Electrical measurements and Auger electron spectroscopy were used to characterize the laser deposited films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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