Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-25T16:42:02.926Z Has data issue: false hasContentIssue false
  • English
  • Français

The Lack of Trapping Centers for Positrons at the Interface of W/Si System and the Investigation of the Depletion Layer in the Schottky Barrier by Positrons as Test Charge Simulating Holes

Published online by Cambridge University Press:  03 September 2012

S. Tanigawa ,
Y. Tabuki ,
L. Wei ,
K. Hinode ,
N. Kobayashi ,
T. Onai  and
N. Owada
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Y. Tabuki
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
L. Wei
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
K. Hinode
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
N. Kobayashi
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
T. Onai
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
N. Owada
Affiliation:
Device Development Center, Hitachi, Ltd., Oume-shi, Tokyo 198, Japan
Get access

Abstract

Interfacial phenomena in the W-Si systems were studied by a monoenergetic positron beam. Doppler broadening profiles of the positron annihilation were measured as a function of incident positron energy. Tungsten thin films of 100 nm in thickness were deposited on p-type, 10 »cm Cz-grown Si wafers with (100) orientation by the DC magnetron sputtering method. Specimens were annealed at various temperatures in order to form suicides. It was found that the position of the interface of both W/Si and W silicide/Si is very different from the position expected from a simple situation neglecting the effect of electric field on the diffusion of positrons. This fact arouse the utility of positrons as a test charge to probe directly the electric field gradient in the Schottky barrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 307
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Muraka, S. P., J. Vac. Sci. Technol. 17 (4). 775 (1980).CrossRefGoogle Scholar
[2] Zirinsky, S., Hammer, W., d Heurie, F. and Bablin, J., Appl. Phys. Lett. 33. 76 (1978).Google Scholar
[3] Miller, R. J., Thin. Solid. Films. 72, 427 (1980).Google Scholar
[4] Goeltz, G., Torres, J., Lajzerowicz, J. Jr and Bomchil, G., Thin. Solid. Films. 124,19 (1985).Google Scholar
[5] Nava, F., Tu, K. N., Mazzega, E., Michelini, M. and Queirolo, G., J. Appl. Phys. 61, 1085 (1987).Google Scholar
[6] Schultz, P. J. and Lynn, L. G., Rev. Mod. Phys. 60, 701 (1988).Google Scholar
[7] West, R. N., in Positrons in Solids, edited by Hautojärvi, P.(Springer, Berlin, 1979) 91.Google Scholar
[8] Tanigawa, S., Iwase, Y., Uedono, A. and Sakairi, H., J. Nucl. Mater. 133 & 134, 463 (1985).Google Scholar
[9] Valkealahti, S. and Nieminen, R. M., Appl. Phys. A35, 51 (1984).Google Scholar
[10] Corbel, C., Hautojärivi, P., Makinen, J., Vehanen, A. and Mathiot, D., J. Phys. Condens. Matter. 1, 6315 (1989).Google Scholar
[11] Nicolet, M. -A. and Lau, S. S., in VLSI Electronics Microstructure Science, edited by Einspruch, N. G. and Larrabee, G. B. (Academic Press, New York, 1983) Chap. 6.Google Scholar
[12] Siegal, M. P., Graham, W. R. and Santiago, J. J., J. Appl. Phys. 65, 766 (1989).Google Scholar