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Kinetics Of Dopant Distribution In Lpe Grown GaAs Epi-Layer

Published online by Cambridge University Press:  25 February 2011

Y. Okamoto
Affiliation:
Materials Research and Analysis Center, Corporate R and D Group, SHARP Corporation, Tenri, Nara 632, JAPAN
Y. Akagi
Affiliation:
Materials Research and Analysis Center, Corporate R and D Group, SHARP Corporation, Tenri, Nara 632, JAPAN
M. Koba
Affiliation:
Materials Research and Analysis Center, Corporate R and D Group, SHARP Corporation, Tenri, Nara 632, JAPAN
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Summary

We have studied the distribution and diffusion of Te, Mg, and Zn dopants in GaAs which was grown by an LPE process. It was found that the distribution of the dopant atoms of Te and Zn in the Te-doped n-type epi-layer on the Zn-doped p-type substrate showed a sharp and clear interface. In contrast, the dopant distribution of Mg and Zn in the Mg-doped p-type epi-layer on the Zn-doped substrate indicated a diffuse interface because of significant interdiffusion. The X-ray diffraction of these epi-layers and substrates revealed that the Mg-doped epi-layer showed rather poorer crystalline quality than the other specimens. These experimental results can be accounted for by a model of charged vacancies in a p-type GaAs.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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