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Kinetics and Mechanism of Formation of GaN from β-Ga2O3 by NH3

Published online by Cambridge University Press:  31 January 2011

Toshiki Sakai
Affiliation:
t.sakai@eng.hokudai.ac.jp, Hokkaido University, Sapporo, Japan
Hajime Kiyono
Affiliation:
kiyono@eng.hokudai.ac.jp, Hokkaido University, Sapporo, Japan
Shiro Shimada
Affiliation:
shimashi@eng.hokudai.ac.jp, Hokkaido University, Sapporo, Japan
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Abstract

Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 – 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (∼50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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