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Jet-printed Fabrication of a-Si:H Thin-film Transistors and Arrays

Published online by Cambridge University Press:  17 March 2011

W.S. Wong
Affiliation:
Electronic Materials Lab
S. Ready
Affiliation:
Electronic Materials Lab
R. Matusiak
Affiliation:
Document Hardware Lab 3333 Coyote Hill Road Palo Alto, CA 94304, U.S.A
S.D. White
Affiliation:
Document Hardware Lab 3333 Coyote Hill Road Palo Alto, CA 94304, U.S.A
J.-P. Lu
Affiliation:
Electronic Materials Lab
R. Lau
Affiliation:
Electronic Materials Lab
J. Ho
Affiliation:
Electronic Materials Lab
R.A. Street
Affiliation:
XEROX Palo Alto Research Center
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Abstract

Phase-change wax-based printed masks were used to fabricate a-Si:H thin-film transistors (TFTs) in place of conventional lithography. Wax-mask features with a minimum feature size of ∼20 [.proportional]m was achieved using an acoustic-ink-printing process. Bottom-gate TFTs with source-drain contacts overlapping the channel were created using a four-mask process. The TFTs have I-V characteristics comparable to photolithographically patterned devices, with mobility of 0.6-1 cm2/V·s, threshold voltage of 2-3 V, and on/off ratios exceeding 107, for devices with channel lengths below 50[.proportional]m.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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