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Irradiation Effects on the Interfacial Adhesion Between Ti Films and SiO2 Substrate

Published online by Cambridge University Press:  21 February 2011

Guoan Cheng
Affiliation:
Department of Engineering Physics, Tsinghua University, Beijing, China
Baixin Liu
Affiliation:
Department of Engineering Physics, Tsinghua University, Beijing, China
Hengde Li
Affiliation:
Department of Engineering Physics, Tsinghua University, Beijing, China
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Abstract

The interfacial adhesion of Ti films on SiO2 substrate was studied by room temperature argon ion irradiation. Range of ion energy was chosen from 100 to 300 keV. Adhesive strength was measured by scratching test. For Ti/SiO2 pair irradiated by 100 keV argon ions, the adhesion was easier to enhance and much greater strength was obtained than that irradiated by 300 keV argon ions. The threshold dose also increased with the increasing of ion energy. The adhesive strength and the threshold dose increased when the metallizing temperatures were higher. Rutherford backscattering spectra(RBS) showed that a transition layer of about 10 nm thick was formed in Ti/SiO2 interface region after irradiation to a dose of 5X1016 Ar/cm2, indicating some chemical reaction has probably taken place. The experimental results are discussed in terms of thermodynamics of solids.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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