Skip to main content Accessibility help
×
Home

Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN

Published online by Cambridge University Press:  01 February 2011

Xian-An Cao
Affiliation:
xtsao@yahoo.com, West Virgina Univ., Department of Computer Science and Electrical Engineering, PO Box 6109, Morgantown, WV, 26506, United States
H. Piao
Affiliation:
Piao@crd.ge.com, GE Global research Center, Niskayuna, NY, 12309, United States
S. F. LeBoeuf
Affiliation:
LeBoeuf @crd.ge,com, GE Global research Center, Niskayuna, NY, 12309, United States
J. Y. Lin
Affiliation:
lin@phys.ksu.edu, Kansas State University, Department of Physics, Manhattan, KS, 66506, United States
H. X. Jiang
Affiliation:
jiang@phys.ksu.edu, Kansas State University, Department of Physics, Manhattan, KS, 66506, United States
Get access

Abstract

The surface properties of n-type AlxGa1−xN (x=0-0.5) exposed to inductively couple plasma were studied systematically using metal contact measurements and X-ray photoelectron spectroscopy (XPS). Cl2/BCl3 and Ar plasma treatment considerably increased the surface conductivity of AlxGa1−xN (x<0.3) and thus improved the characteristics of Ti/Al-based ohmic contacts, but degraded the surface and contact properties of AlxGa1−xN (x≥0.3). XPS measurements revealed a significant increase in oxygen incorporation and energy shifts of the core-level spectra in plasma-treated samples. In contrast to an upward shift of the surface Fermi level in plasma-treated GaN, the surface Fermi level moved away from the conduction band in Al0.5Ga0.5N upon plasma treatment. These findings suggest that the nature of plasma damage in AlGaN appears to be a function of the Al mole fraction. Plasma-induced defects in high-Al AlGaN may act as deep-level compensation centers, degrading the surface electrical properties and contact characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Allerman, A.A., Crawford, M.H., Fischer, A.J., Bogart, K.H.A., Lee, S.R., Follstaedt, D.M., Provencio, P.P. and Koleske, D.D., J. Cryst. Growth , 272, 227 (2005).CrossRefGoogle Scholar
2. Zhang, J. P., Hu, X., Bilenko, Y., Deng, J., Lunev, A., Shur, M., Gaska, R., Shatalov, M., Yang, J. W., and Khan, M. Asif, Appl. Phys. Lett. 85, 5532 (2004).CrossRefGoogle Scholar
3. Cao, X.A., LeBoeuf, S.F., Stecher, T.E., IEEE Electron. Dev. Lett. 27, 329 (2006).CrossRefGoogle Scholar
4. Chitnis, Sun, J., Mandavilli, V., Pachipulusu, R., Wu, S., Gaevski, M., Adivarahan, V., Zhang, J. P., and Khan, M. A., Sarua, A. and Kuball, M., Appl. Phys. Lett. 81, 3491 (2002).Google Scholar
5. McClintock, R., Yasan, A., Mayes, K., Shiell, D., Darvish, S. R., Kung, P., and Razeghi, M., Appl. Phys. Lett. 84, 1248 (2004).CrossRefGoogle Scholar
6. Ruvimov, S., Liliental-Weber, Z., Washburn, J., Qiao, D., Lau, S. S., and Chu, P. K., Appl. Phys. Lett. 73, 2582 (1998).CrossRefGoogle Scholar
7. Motayed, Bathe, R., Wood, M. C., Diouf, O. S., Vispute, R. D., and Mohammad, S. Noor, J. Appl. Phys. 93, 1087 (2003).CrossRefGoogle Scholar
8. Murai, S., Masuda, H., Koide, Y., and Murakami, M., Appl. Phys. Lett. 80, 2934 (2002).CrossRefGoogle Scholar
9. Kumar, V., Zhou, L., Selvanathan, D., and Adesida, I., J. Appl. Phys. 92, 1712 (2002).CrossRefGoogle Scholar
10. Cao, X.A., Pearton, S.J., Dang, G.T., Zhang, A.P., Ren, F., J.M.. Van Hove, IEEE Trans. on Electron Dev. 47, 1320 (2000).CrossRefGoogle Scholar
11. Cao, X.A., Ren, F., Pearton, S. J., Critical Rev. Solid State Mat. Sci. 25, 279 (2000).CrossRefGoogle Scholar
12. Fan, Z., Mohammad, S. N., Kim, W., Aktas, Ö., Botchkarev, A. E., and Morkoç, H., Appl. Phys. Lett. 68, 1672 (1996).CrossRefGoogle Scholar
13. Jang, H. W., Jeon, C. M., Kim, J. K., and Lee, J. L., Appl. Phys. Lett. 78, 2015 (2001).CrossRefGoogle Scholar
14. Nikishin, S.A., Borisov, B. A., Chandolu, A., Kuryatkov, V. V., Temkin, H., Holtz, M., Mokhov, E. N., Makarov, Y. and Helava, H., Appl. Phys. Lett. 85, 4355 (2004).CrossRefGoogle Scholar
15. Selvanathan, D., Mohammed, F. M., Bae, J. O., Adesida, I., and Bogart, K. H., J. Vac. Sci.Technol. B 23, 2538 (2005).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 22nd January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-kdwz2 Total loading time: 0.267 Render date: 2021-01-22T04:32:53.830Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *