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Interface Structure and Defects in CVD 3C-SiC on (111) and (112) TiC Substrates
Published online by Cambridge University Press: 25 February 2011
Abstract
3C-SiC, lattice-matched with TiC, is a candidate for use in wide-bandgap semiconductor devices. Epitaxial 3C-SiC films were grown on (111) and (112) TiC substrates, and defects were characterized by analytical TEM.
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- Copyright © Materials Research Society 1993
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