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Interdiffusion of Au/Ni/cr on Silicon Substrate
Published online by Cambridge University Press: 26 February 2011
Abstract
The interdiffusion between Au/Ni/Cr multilayer metallization and silicon substrate was studied by using the measurement of sheet resistance and AES profiling technique. Interdiffusion was found to increase with temperature and resulted in the increase of sheet resistance. The effect of Cr and Ni as diffusion barrier was also verified.
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- Copyright © Materials Research Society 1988
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