Skip to main content Accessibility help
×
Home
Hostname: page-component-56f9d74cfd-nww4m Total loading time: 0.247 Render date: 2022-06-25T02:50:18.079Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true }

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

Published online by Cambridge University Press:  17 March 2011

Philomela Komninou
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Joseph Kioseoglou
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Eirini Sarigiannidou
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
George P. Dimitrakopulos
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Thomas Kehagias
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Alexandros Georgakilas
Affiliation:
IESL/FORTH and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
Gerard Nouet
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
Pierre Ruterana
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
Get access

Abstract

The interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsuhita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys., 35, L74 (1996).CrossRefGoogle Scholar
2. Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys., 76, 1363 (1994).CrossRefGoogle Scholar
3. Pankove, J.I., Moustakas, T.D., Semiconductors and Semimetals: Gallium Nitride (GaN) I-II, ed. Willardson, R.K., Weber, E.R. (Academic Press, 1998).Google Scholar
4. Potin, V., Ruterana, P., Nouet, G., Pond, R. C., Morkoc, H., Phys. Rev.B, 61, 5587 (2000).CrossRefGoogle Scholar
5. Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., Den-Baars, S. P., and Speck, J. S., J. Appl. Phys., 80, 3228 (1996).CrossRefGoogle Scholar
6. Ruterana, P. and Nouet, G., Mat. Res. Soc. Symp, 595, W5.4.1 (2000).Google Scholar
7. Northrup, J. E., Neugebauer, J., Romano, L.T. Phys. Rev. Lett., 77, 103 (1996).CrossRefGoogle Scholar
8. Potin, V., Nouet, G., Ruterana, P., Phil. Mag. A, 79 2899 (1999).CrossRefGoogle Scholar
9. Austerman, S. B., Gehman, W. G., J. Matter. Sci., 1, 249 (1966).CrossRefGoogle Scholar
10. Komninou, Ph., Kehagias, Th., Kioseoglou, J., Sarigiannidou, E., Karakostas, Th., Nouet, G., Ruterana, P., Amimer, K., Mikroulis, S., Georgakilas, A.. Mat. Res. Soc. Symp., 639, G3.47 (2001).CrossRefGoogle Scholar
11. Stadelmann, P. A., Ultramicroscopy, 21, 131 (1987).CrossRefGoogle Scholar
12. Hirth, J.P., Lothe, J., Theory of Dislocations, 2nd Ed, New York Wiley Intersciences, 345 (1982).Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *