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Integrated (Ba,Sr)TiO3 Thin-Film Technology for RF and Microwave Applications

Published online by Cambridge University Press:  01 February 2011

Toshimasa Suzuki
Affiliation:
suzuki-t@jty.yuden.co.jp, Taiyo Yuden Co., Ltd., Materials R&D department, 5607-2 Nakamuroda, Takasaki, Gunma, WY, 370-3347, Japan, +81273608307, +81273608315
Daiki Ishii
Affiliation:
d-ishii@jty.yuden.co.jp, Taiyo Yuden Co., Ltd., Materials R&D div., 5607-2 Nakamuroda, Takasaki, Gunma, 370-3347, Japan
Yoshiki Iwazaki
Affiliation:
y-iwazaki@jty.yuden.co.jp, Taiyo Yuden Co., Ltd., Materials R&D div., 5607-2 Nakamuroda, Takasaki, Gunma, 370-3347, Japan
Kentaro Morito
Affiliation:
kmorito@jty.yuden.co.jp, Taiyo Yuden Co., Ltd., Materials R&D div., 5607-2 Nakamuroda, Takasaki, Gunma, 370-3347, Japan
Youichi Mizuno
Affiliation:
ymizuno@jty.yuden.co.jp, Taiyo Yuden Co., Ltd., Materials R&D div., 5607-2 Nakamuroda, Takasaki, Gunma, 370-3347, Japan
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Abstract

The microwave tunable capability and its related material optimization of (Ba,Sr)TiO3 thin films in the parallel-plate capacitor form is discussed in terms of the dependence of barium concentration, acceptor doping, and in-plane film stress, based on the present broadband microwave characterization technique under various bias fields. The barium-content dependence indicates the tradeoff between tunability and dielectric loss, and the notable field-induced loss in SrTiO3 is confirmed as an intrinsic quasi-Debye contribution. The Mg dopant incorporated into a perovskite lattice shows almost no effectiveness on tunable device performance, except for enhanced insulation as an electron acceptor, while the low bias-field dependence of the dielectric loss suggests the possibility of the partial occupation of the alkaline-earth-ion site by Mg. The reduction of in-plane thermal stress controlled by the pressure during sputtering deposition leads to higher permittivity and tunability while degrading the film crystallinity by ion bombardment. The low-frequency loss tends to increase with crystal damage; however, the microwave loss remains unchanged, revealing the applicability of sputtering stress control to real microwave devices. In addition, we demonstrate the operation of an analog phase shifter using parallel-plate ferroelectric tunable capacitors and its application to a phased array antenna monolithically integrated on a silicon substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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