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Instability formation in epitaxial SiGe lines under hydrogen annealing

Published online by Cambridge University Press:  06 September 2013

Birgit Seiss
Affiliation:
STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France Université de Lyon, Institut des Nanotechnologies de Lyon (INL –UMR 5270) CNRS-ECL-CPE-INSA Lyon, Bat Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex, France
Georges Brémond
Affiliation:
Université de Lyon, Institut des Nanotechnologies de Lyon (INL –UMR 5270) CNRS-ECL-CPE-INSA Lyon, Bat Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex, France
Didier Dutartre
Affiliation:
STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France
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Abstract

The influence of film thickness and line width on the morphology of epitaxial SiGe was studied after an annealing step. The morphology of 5 nm and 19 nm thick SiGe was characterized in 60-490 nm wide lines which were oriented along <100> on Si (001) substrates. We have shown that the annealed SiGe morphology changed significantly as a function of line width and film thickness. Wide lines of 19 nm thick SiGe showed ridge formation; as the line width was decreased the morphology stabilized and then became unstable with the formation of bulges. The morphology of 5 nm thick SiGe consisted of ridges in wide lines, changed to faceted islands in narrower lines and was stable in the narrowest lines.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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