Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-559fc8cf4f-z4vvc Total loading time: 0.395 Render date: 2021-02-25T16:08:26.332Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Instability formation in epitaxial SiGe lines under hydrogen annealing

Published online by Cambridge University Press:  06 September 2013

Birgit Seiss ,
Georges Brémond  and
Didier Dutartre
Birgit Seiss
Affiliation:
STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France Université de Lyon, Institut des Nanotechnologies de Lyon (INL –UMR 5270) CNRS-ECL-CPE-INSA Lyon, Bat Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex, France
Georges Brémond
Affiliation:
Université de Lyon, Institut des Nanotechnologies de Lyon (INL –UMR 5270) CNRS-ECL-CPE-INSA Lyon, Bat Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex, France
Didier Dutartre
Affiliation:
STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France
Get access

Abstract

The influence of film thickness and line width on the morphology of epitaxial SiGe was studied after an annealing step. The morphology of 5 nm and 19 nm thick SiGe was characterized in 60-490 nm wide lines which were oriented along <100> on Si (001) substrates. We have shown that the annealed SiGe morphology changed significantly as a function of line width and film thickness. Wide lines of 19 nm thick SiGe showed ridge formation; as the line width was decreased the morphology stabilized and then became unstable with the formation of bulges. The morphology of 5 nm thick SiGe consisted of ridges in wide lines, changed to faceted islands in narrower lines and was stable in the narrowest lines.

Keywords

epitaxy morphology thin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 87 - 92
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

Thompson, S.E., Armstrong, M., Auth, C., Cea, S., Chau, R., Glass, G., Hoffman, T., Klaus, J., Ma, Z., Mcintyre, B., Murthy, A., Obradovic, B., Shifren, L., Sivakumar, S., Tyagi, S., Ghani, T., Mistry, K., Bohr, M. and El-Mansy, Y., IEEE Electron Device Lett., 25(4), 191 (2004)CrossRef
Dutartre, D., Seiss, B., Campidelli, Y., Pellisier-Tanon, D., Barge, D. and Pantel, R., Thin Solid Films, 520, 3163 (2012)CrossRef
Dismukes, J.P., Ekstrom, L. and Paff, R.I., Journal of Physical Chemistry, 68(10), 3021 (1964)CrossRef
Seiss, B. and Dutartre, D., Solid State Electronics, (2013), http://dx.doi.org/10.1016/j.sse.2013.01.034
Pidduck, A.J., Robbins, D.J., Cullis, A.G., Leong, W.Y. and Petit, A.M., Thin Solid Films, 222, 78 (1992)CrossRef
Dutartre, D., Warren, P., Chollet, F., Gisbert, F., Bérenguer, M. and Berbézier, I., Journal of Crystal Growth, 142, 78 (1994)CrossRef
Wortman, J.J. and Evans, R.A., Journal of Applied Physics, 36, 153 (1965)CrossRef
Ozkan, C.S., Nix, W.D. and Gao, H., J. Mater. Res., 14(8), 3247 (1999)CrossRef

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 12 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 25th February 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Instability formation in epitaxial SiGe lines under hydrogen annealing
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Instability formation in epitaxial SiGe lines under hydrogen annealing
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Instability formation in epitaxial SiGe lines under hydrogen annealing
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *