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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

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In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS

Published online by Cambridge University Press:  01 February 2011

Randy Preston Tompkins ,
Brenda L. VanMil ,
Kyoungnae Lee ,
Eric D. Schires ,
Yewhee Chye ,
David Lederman  and
Thomas H. Myers
Randy Preston Tompkins
Affiliation:
randyto@hotmail.com, West Virginia University, Physics, G-30 Hodges Hall, Morgantown, WV, 26506, United States, (304)-599-9190, (304)-293-5732
Brenda L. VanMil
Affiliation:
quadian@netscape.net, West Virginia University, Physics, United States
Kyoungnae Lee
Affiliation:
klee3@mix.wvu.edu, West Virginia University, Physics, United States
Eric D. Schires
Affiliation:
Eric.Schires@mail.wvu.edu, West Virginia University, Physics, United States
Yewhee Chye
Affiliation:
Yewhee.Chye@mail.wvu.edu, West Virginia University, Physics, United States
David Lederman
Affiliation:
David.Lederman@mail.wvu.edu, West Virginia University, Physics, United States
Thomas H. Myers
Affiliation:
Thomas.Myers@mail.wvu.edu, West Virginia University, Physics
Corresponding
E-mail address:
randyto@hotmail.com
quadian@netscape.net
klee3@mix.wvu.edu
Eric.Schires@mail.wvu.edu
Yewhee.Chye@mail.wvu.edu
David.Lederman@mail.wvu.edu
Thomas.Myers@mail.wvu.edu
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Abstract

Reflection high-energy electron diffraction total-reflection-angle x-ray spectroscopy (RHEED-TRAXS) uses high-energy electrons from RHEED to excite x-ray fluorescence. Monitoring characteristic x-rays of selected elements thus allows study of surface coverage of materials. In this study, surface coverage of Ga and In during growth of GaN and InGaN was probed using this technique. Evolution of the surface layer of Ga on GaN during growth and deposition of Ga on static GaN at room temperature were studied. RHEED-TRAXS measurements were performed during growth of InGaN by measuring the ratio of the In Lα to Ga Kα intensity. A significant surface coverage of In was observed at all temperatures investigated regardless of actual In incorporation.

Keywords

molecular beam epitaxy (MBE) Ga RHEED
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF04-06
Copyright
Copyright © Materials Research Society 2006

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References

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In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS
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In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS
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