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In-plane Molecular Alignment in Thin Films of Pentacene Grown by Solution Casting and Performance of Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

Takashi Minakata
Affiliation:
minakata.tb@om.asahi-kasei.co.jp, Asahi-KASEI Corporation, Central R&D Laboratories, 2-1 Samejima, Fuji, Shizuoka, 421-3302, Japan, +81-545-62-3376, +81-545-62-3059
Yutaka Nastume
Affiliation:
natsume.yc@om.asahi-kasei.co.jp, Asahi-KASEI Corporation, Central R&D Laboratories, 2-1 Samejima, Fuji, Shizuoka, 416-8501, Japan
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Abstract

We have fabricated solution-processed thin films of pentacene by casting solution on a substrate and vaporizing solvent. The films with large oriented platelet domains were obtained by directionally grown condition. Molecular alignment in the directionally grown grains has been studied by several kinds of structural analysis. Oriented domains with the width of several hundreds microns and the length in an order of cm of the films were confirmed by polarized microscopy. In-plane crystalline structure of the domain has been studied by grazing incidence X-ray diffraction (GIXD) and strong anisotropy of in-plane crystalline structure was confirmed. Crystalline growth direction of the film was determined to be b-axis from both transmission electron diffraction and GIXD. Thin films transistors (TFTs) with directionally oriented domains of the films were fabricated on electrode patterned substrate. The observed maximum carrier mobility of 2.7 cm2/Vs was comparable to that of single crystal, which indicated that the quality of the film was almost identical with the single crystal. Correlation between FET performance and growth direction was studied and preferred performance of TFTs with the film grown perpendicularly to the channel was observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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In-plane Molecular Alignment in Thin Films of Pentacene Grown by Solution Casting and Performance of Thin Film Transistors
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