Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-12-08T01:07:00.964Z Has data issue: false hasContentIssue false

In-Line Temperature Monitoring of Rapid Thermal Annealing Processes

Published online by Cambridge University Press:  15 February 2011

Minseok Oh
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Binh Nguyenphu
Affiliation:
AT&T Microelectronics, 9333 S. John Young Parkway, Orlando, FL 32819
Anthony T. Fiory
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Get access

Abstract

Process control for rapid thermal annealing (RTA) steps in silicon integrated circuit manufacturing is highly dependent on the repeatability of wafer annealing temperatures. The heating lamps in RTA ovens are controlled by an infrared pyrometer in a feedback-control loop. Methods currently in production allow some variability in annealing temperature, owing to the variability of wafer backside emissivities and the fixed emissivity value used for each process recipe. To provide an independent in-situ temperature sensor with potentially improved accuracy, an RTA oven equipped with a ripple pyrometer was used for passive data collection. Results obtained over extensive wafer processing indicate that the ripple temperatures have a correlation with electrical tester data and that the ripple pyrometer repeatability is better than 3°C at 1 standard deviation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Moslehi, M. M., Paranjpe, A, Velo, L. A. and Kuehne, J., Solid State Tech. May,37 (1994).Google Scholar
[2] Lojek, B., in 1 st International Rapid Thermal Processing Conference, edited by Fair, R. B. and Lojek, B. (RTP'93, 1993), p.2.Google Scholar
[3] Fair, R. B., in Rapid Thermal Processing: Science and Technology (Academic Press, 1993), p.349.Google Scholar
[4] Schietinger, C. and Adams, B., SPIE 1366, 284 (1990).Google Scholar
[5] Schietinger, C., Adams, B. and Yarling, C., Mat. Res. Soc. Symp. Proc. 224, 23 (1991).Google Scholar
[6] Desu, S. and Taylor, J. A., J. Am. Ceram. Soc. 73(3), 509 (1990).Google Scholar
[7] Chittipeddi, S., Dziuba, C. M., Kannan, V. C., Kelly, M. J., Cochran, W. T. and Rambabu, B., J. Electron. Mater. 22(7), 785 (1993).Google Scholar
[8] Fiory, A. T., Schietinger, C., Adams, B. and Tinsley, F. G., Mat. Res. Soc. Symp. Proc. 303, 139 (1993).Google Scholar
[9] Fiory, A. T. and Nanda, A. K., Mat. Rec. Soc. Symp. Proc. 342, 3 (1994).Google Scholar