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Injection-Level Spectroscopy of Metal Impurities in Silicon
Published online by Cambridge University Press: 10 February 2011
Abstract
Using a modified photoconductive eddy-current technique, excess carrier decay can be measured and used to identify the specific defect dominating recombination. As the dynamic range of the measurement system is linear over about three orders of magnitude, the injection-level spectroscopy technique can be performed in a single measurement for rapid defect identification.
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- Copyright © Materials Research Society 1998
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