Skip to main content Accessibility help
×
Home
Hostname: page-component-5bf98f6d76-gckwl Total loading time: 3.969 Render date: 2021-04-20T10:41:24.001Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true }

Infrared Ellipsometry Investigation of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  31 January 2011

Franco Gaspari
Affiliation:
franco.gaspari@uoit.ca, UOIT, Science, Oshawa, Canada
Anatoli Shkrebtii
Affiliation:
Anatoli.Chkrebtii@uoit.ca, UOIT, Science, Oshawa, Canada
Tom E. Tiwald
Affiliation:
ttiwald@jawoollam.com, J.A.Woollam Co. Inc., Lincoln, Nebraska, United States
Andrea Fuchser
Affiliation:
afuchser@jawoollam.com, J. A. Woollam Co., Inc., Lincoln, Nebraska, United States
Shafiq Muhammad Ahmed
Affiliation:
MuhammadShafiq.Ahmed@uoit.ca, UOIT, Science, Oshawa, Canada
Tome Kosteski
Affiliation:
kostesk@ecf.utoronto.ca, UofT, Electrical & Computer Engineering, Toronto, Canada
Keith Leong
Affiliation:
leong@ecf.utoronto.ca, UofT, electrical & Computer Engineering, Toronto, Canada
Nazir Kherani
Affiliation:
kherani@ecf.utoronto.ca, University of Toronto, Toronto, Canada
Get access

Abstract

Hydrogenated amorphous silicon (a-Si:H) has been extensively investigated experimentally in the infrared spectral region via techniques such as Fourier Transform Infrared (FTIR) and Raman spectroscopy. Although spectroscopic ellipsometry has been proven to be an important tool for the determination of several parameters of a-Si:H films, including dielectric constant, surface roughness, doping concentration and layer thickness, the spectral range used in these studies has rarely covered the infrared region below 0.6 eV, and never over the complete spectral region of interest (0.04 – 0.3 eV). We have measured for the first time the dielectric function of a-Si:H films grown by the saddle field glow discharge technique by spectroscopic ellipsometry in the energy range from 0.04 eV to 6.5 eV, thus extending the analysis into the far infrared region. The a-Si:H films were deposited on germanium substrates for the ellipsometry studies, and on crystalline silicon substrates for the comparative FTIR analysis. Preparation parameters were chosen to obtain films with different hydrogen content. In this paper, we present the results of the ellipsometry analysis, evaluate different fitting techniques, and compare the results with the corresponding FTIR spectra. The similarities and differences between the spectra are discussed in terms of the a-Si:H properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Searle, T. Amorphous Silicon and its Alloys (INSPEC, London, 1998).Google Scholar
2 Smets, A.H and Sanden, M.C.M. van de, Phys. Rev. B. 76, 073202(2007).CrossRefGoogle Scholar
3 Kupchak, I. M. Gaspari, F. Shkrebtii, A. I. and Perz, J. M. J. Appl. Phys. 104, 123525–1 (2008) and F. Gaspari I. M. Kupchak A. I. Shkrebtii and J. M. Perz. Condensed Matter Archive, Nov. 17, 2008. http://arxiv.org/abs/0811.2282 0811.2282.CrossRefGoogle Scholar
4 Gaspari, F. Kupchak, I. M. Shkrebtii, A. I. and Perz, J. M. Phys. Rev. B. 79, 224203(2009)CrossRefGoogle Scholar
5 Drevillon, B. Microelectronics Journal, 24, 347(1993).CrossRefGoogle Scholar
6 Darwich, R. Cabarrocas, P. Roca, Vallon, S. Ossikovski, R. Morin, P. and Zellama, K. Philos. Mag. B. 72, 363(1995).CrossRefGoogle Scholar
7 Gaspari, F. O'Leary, S.K., Zukotynski, S. and Perz, J.M. J. non-Cryst. Sol., 155, 149(1993).CrossRefGoogle Scholar
8 Fujiwara, H. Spectroscopic Ellipsometry Principles and Applications, (West Sussex, John Wiley & Sons, 2007).CrossRefGoogle Scholar
9 Woollam, J.A. “Ellipsometry, Variable Angle Spectroscopic”, in Wiley Encyclopedia of Electrical and Electronic Engineering, New York: Wiley (2000) 109117.Google Scholar
10 Jellison, G. E. Jr. and Modine, F.A. Appl. Phys. Lett. 69, 2137(1996).CrossRefGoogle Scholar
11 Dobrowolski, J. A. Guo, Yanen, Tiwald, Tom, Ma, Penghui, and Poitras, Daniel, APPLIED OPTICS, Vol. 45, No. 7, (2006).Google Scholar
12 Langforf, A.A. Fleet, M.L. Nelson, B.P. Lanford, W.A. and Maley, N. Phys. Rev. B 45, 13 367 (1992).Google Scholar
13 Cardona, M. Phys. Status Solidi B 118, 463(1983)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 10 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 20th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Infrared Ellipsometry Investigation of Hydrogenated Amorphous Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Infrared Ellipsometry Investigation of Hydrogenated Amorphous Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Infrared Ellipsometry Investigation of Hydrogenated Amorphous Silicon
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *