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Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Published online by Cambridge University Press:  16 January 2012

Stefan Schöche
Affiliation:
Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A.
Tino Hofmann
Affiliation:
Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A.
Nebiha Ben Sedrine
Affiliation:
Instituto Tecnológico e Nuclear, Sacavém, Portugal
Vanya Darakchieva
Affiliation:
Instituto Tecnológico e Nuclear, Sacavém, Portugal Department of Physics, Chemistry and Biology, Linköping University, Sweden
Xinqiang Wang
Affiliation:
State Key Lab of Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing, China
Akihiko Yoshikawa
Affiliation:
Graduate School of Electrical and Electronics Engineering, Venture Business Laboratory, Chiba University, Chiba, Japan
Mathias Schubert
Affiliation:
Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A.
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Abstract

We apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1x1018 cm-3 and 3x1019 cm-3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

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Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
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Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
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