Skip to main content Accessibility help
×
Home

The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon

Published online by Cambridge University Press:  17 March 2011

F. Cristiano
Affiliation:
CEMES/CNRS, 29 rue J.Marvig, 31055 Toulouse Cedex, France
B. Colombeau
Affiliation:
CEMES/CNRS, 29 rue J.Marvig, 31055 Toulouse Cedex, France
B. de Mauduit
Affiliation:
CEMES/CNRS, 29 rue J.Marvig, 31055 Toulouse Cedex, France
F. Giles
Affiliation:
Infineon Technologies, Munich, Germany
M. Omri
Affiliation:
Faculté des Sciences, Bizerte, Tunisia
A. Claverie
Affiliation:
CEMES/CNRS, 29 rue J.Marvig, 31055 Toulouse Cedex, France
Get access

Abstract

In this work, we have studied the relative stability of perfect (PDLs) and faulted (FDLs) dislocation loops formed during annealing of preamorphised silicon. In particular, we have investigated the effect of the initial supersaturation of Si interstitial atoms (Si(int)s) created by the implantation process on their thermal evolution. Transmission Electron Microscopy analysis shows that in samples with a low Si interstitial supersaturation, FDLs are the dominant defects while PDLs appear as the most stable defects in highly supersaturated samples. We have calculated the formation energies of both types of dislocation loops and found that, for defects of the same size, FDLs are more energetically stable than PDLs, if their diameter is smaller than 80 nm and viceversa. The application of these calculations to the samples studied in this work indicates that a direct correspondence exists between the formation energy of the two defect families and the number of atoms bound to them. Moreover, we have shown that the relative stability of FDLs and PDLs depends on the initial supersaturation of Si(int)s created during the implantation process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Jones, K.S., Prussin, S. and Weber, E.R., Appl. Phys. A, 45, 1 (1988).10.1007/BF00618760CrossRefGoogle Scholar
2. Claverie, A., Giles, L.F., Omri, M., Mauduit, B. de, Assayag, G. Ben and Mathiot, D., Nucl. Instr. Meth. in Phys. Res. B, 147, 1 (1999).10.1016/S0168-583X(98)00617-XCrossRefGoogle Scholar
3. Claverie, A., Colombeau, B., Assayag, G. Ben, Bonafos, C., Cristiano, F., Omri, M. and Mauduit, B. de, Mat. Sci. in Semic. Proc., in press (April 2000).Google Scholar
4. Cowern, N.E.B., Mannino, G., Stolk, P.A., Roozeboom, F., Huizing, H.G.A., Berkum, J.G.M. van, Boer, W.B. de, Cristiano, F., Claverie, A., and Jaraiz, M., Phys. Rev. Lett, 82, 4460 (1999).10.1103/PhysRevLett.82.4460CrossRefGoogle Scholar
5. Li, J. and Jones, K.S., Appl. Phys. Lett., 73, 3748 (1998).10.1063/1.122882CrossRefGoogle Scholar
6. Pan, G.Z., Tu, K.N. and Prussin, A., J. Appl. Phys., 81, 78 (1997).10.1063/1.364099CrossRefGoogle Scholar
7. Bonafos, C., Mathiot, D. and Claverie, A., J. Appl. Phys., 83, 3008 (1998).10.1063/1.367056CrossRefGoogle Scholar
8. Mauduit, B. de, Laânab, L., Bergaud, C., Faye, M.M., Martinez, A., and Claverie, A., Nucl. Inst. and Meth. in Phys. Res. B, 84, 190 (1994).10.1016/0168-583X(94)95752-5CrossRefGoogle Scholar
9.TRIM-95, after Ziegler, J.F., Biersack, J.P., and Littmark, D.. The Stopping and Ranges of Ions in Solids, vol.1, ed. Ziegler, J.F. (Pergamon, New York) (1985).Google Scholar
10. Bonafos, C., Omri, M., Mauduit, B. de, Assayag, G. Ben, Claverie, A., Alquier, D., Martinez, A., and Mathiot, D., J. Appl. Phys., 82, 2855 (1997).10.1063/1.366117CrossRefGoogle Scholar
11. Seibt, M., Mat. Res. Soc. Symp. Proc, 429, 109 (1996).10.1557/PROC-429-109CrossRefGoogle Scholar
12. Cristiano, F., Grisolia, J., Colombeau, B., Omri, M., Mauduit, B. de, Claverie, A., Giles, F. and Cowern, N.E.B., J. Appl. Phys., in press (June 2000).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 12 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 22nd January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-gtgjg Total loading time: 0.469 Render date: 2021-01-22T04:35:31.377Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *