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Influence of oxygen partial pressure on the quality of nanowires for energetic photon detection applications

Published online by Cambridge University Press:  01 February 2011

Y. Zhang  and
S. S. Mao
Y. Zhang
Affiliation:
Lawrence Berkeley National Laboratory
S. S. Mao
Affiliation:
Lawrence Berkeley National Laboratory Department of Mechanical Engineering University of California at Berkeley Berkeley, CA 94720, U.S.A. Email: ssmao@lbl.gov
Corresponding
E-mail address:
ssmao@lbl.gov
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Abstract

ZnO based semiconductors have emerged as promising materials for energetic photon detection. Aimed to improve photon detection efficiency, we have successfully grown ZnO nanowires based on vapor- liquid-solid approach. In this paper, we examine the influence of oxygen partial pressure on the quality ZnO nanowires. Optical properties of the nanowires grown under different oxygen environment were characterized, and we found that low oxygen partial pressure can result in large concentration of defect states, as reflected by increased visible emission and an elevated threshold for stimulated emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 850: Symposium MM – Ultrafast Lasers for Materials Science , 2004 , MM3.2
Copyright
Copyright © Materials Research Society 2005

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References

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