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Improvement of Threshold Voltage Degradation Characteristics of a-Si:H TFT by Pre-Electrical Bias-Aging for Amoled Display

Published online by Cambridge University Press:  01 February 2011

Jae-Hoon Lee
Affiliation:
jhlee@emlab.snu.ac.kr, Seoul National Univ., School of Electrical Engineering, School of Electrical Engineering,Seoul National Univ. #050,San 56-1, Shillim-dong, Kwanak-ku, Seoul, Seoul, Seoul, 151-742, Korea, Republic of, +82-2-880-7992, +82-2-871-7992
Sang-Geun Park
Affiliation:
psg97@emlab.snu.ac.kr, Seoul National Univ., School of Electrical Engineering, #050, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, 151-742, Korea, Republic of
Kwang-Sub Shin
Affiliation:
luke@emlab.snu.ac.kr, Seoul National Univ., School of Electrical Engineering, #050, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, 151-742, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National Univ., School of Electrical Engineering, #050, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, 151-742, Korea, Republic of
Joon-Chul Goh
Affiliation:
joonchul.goh@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
Jong-Moo Huh
Affiliation:
jm.huh@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
Joonhoo Choi
Affiliation:
jhoo.choi@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
Kyuha Chung
Affiliation:
kyuha.chung@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
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Abstract

We propose a pre-electrical bias aging to reduce threshold voltage (Vth) shift of hydrogenated- amorphous silicon thin-film transistor (a-Si:H TFT) for AMOLED display. The quantity of Vth shift in the sample subjected to a bias-aging is reduced due to the reduction of created dangling bond density, compared with a sample without a bias-aging. When an identical stress duration of 50,000 sec is applied to a-Si:H TFT with or without a pre-electrical bias-aging, the created dangling bond density (ΔNDB) after a pre-electrical bias-aging is decreased from 1.38 × 1011/cm2 to 0.685 × 1011/cm2. Our experimental results indicate that after the pre-electrical bias aging, a newly created dangling bond during an electrical stress is decreased because a weak bond density and hydrogen diffusion may be decreased.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1. Stewart, M., “Polysilicon TFT Technology for Active Matrix OLED Displays.” IEEE Trans. on Electron Devices, Vol. 48, No. 5, pp. 845851, 2001.CrossRefGoogle Scholar
2. Nathan, A., “Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic”, IEEE Journal of Solid-State Circuits, vol.39, pp.14771486, 2004.CrossRefGoogle Scholar
3. Powell, M.J., “The Physics of Amorphous-Silicon Thin-Film Transistors”, IEEE Trans. on Electron Devices, Vol. 36, No. 12, pp. 27532763, 1989.CrossRefGoogle Scholar
4. Powell, M.J., “Defect pool in amorphous silicon thin-film transistors”, Phys.Rev.B, vol. 45, pp.41604170, 1992.CrossRefGoogle ScholarPubMed
5. Jackson, W.B., “Creation of near interface defects in hydrogenated amorphous siliconsilicon nitride hetero junctions: The role of hydrogen”, Phys.Rev.B, vol. 36, pp.62176220, 1987.CrossRefGoogle Scholar

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Improvement of Threshold Voltage Degradation Characteristics of a-Si:H TFT by Pre-Electrical Bias-Aging for Amoled Display
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Improvement of Threshold Voltage Degradation Characteristics of a-Si:H TFT by Pre-Electrical Bias-Aging for Amoled Display
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