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Improvement of Gaas Crystal Quality on Si Grown by Mocvd Through Two-Dimensional-Like Nucleation with Low Temperature in Situ Hydrogen/Arsine Plasma Cleaning

Published online by Cambridge University Press:  25 February 2011

Euijoon Yoon
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Rafael Reif
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We report the significant improvement of GaAs crystal quality on Si grown by metal-organic chemical vapor deposition (MOCVD) with an in situ low temperature hydrogen/arsine plasma cleaning of the Si substrate at 450°C and a consequent controlled two-dimensional-like morphology of the low temperature buffer layer at its early stage. The most critical step that determines the interfacial cleanliness and the early stages of the nucleation and thin film formation of heteroepitaxial GaAs on Si in a non-ultrahigh vacuum MOCVD system is the substitution of hydrogen atoms passivating the Si surface after ex situ HF-dip with pas-sivating As atoms. Reduction of in situ cleaning temperature ensures the very slow kinetics of thermal desorption of the hydrogen atoms and re-oxidation of exposed Si surface from the reactor environment, and provides a fully As-passivated Si surface, leading to a 2D-like buffer layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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Improvement of Gaas Crystal Quality on Si Grown by Mocvd Through Two-Dimensional-Like Nucleation with Low Temperature in Situ Hydrogen/Arsine Plasma Cleaning
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Improvement of Gaas Crystal Quality on Si Grown by Mocvd Through Two-Dimensional-Like Nucleation with Low Temperature in Situ Hydrogen/Arsine Plasma Cleaning
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