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Improved Electrical Properties of Ga2O3:Sn/CIGS Hetero-Junction Photoconductor

Published online by Cambridge University Press:  27 January 2014


Kenji Kikuchi
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan Graduate School of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kouhoku-ku, Yokohama, 223–8522, Japan
Shigeyuki Imura
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan
Kazunori Miyakawa
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan
Hiroshi Ohtake
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan
Misao Kubota
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan
Eiji Ohta
Affiliation:
Graduate School of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kouhoku-ku, Yokohama, 223–8522, Japan

Abstract

We examined the potential application of CuIn1-xGaxSe1-ySy (CIGS) film for visible light image sensors. CIGS chalcopyrite semiconductors, which are representative of high efficiency thin film solar cells, have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. The dark current of this hetero-junction was 10-9 A/cm2 at less than 7 V. Moreover, an avalanche multiplication phenomenon was observed at an applied voltage of over 8 V. However, this structure had sensitivity only in the ultraviolet light region due to the much lower carrier density of the Ga2O3 layer. We therefore used a tin-doped Ga2O3 (Ga2O3:Sn) layer deposited by pulsed laser deposition (PLD) for the n-type layer to increase the carrier density. The sensitivity of the visible region was observed in the Ga2O3:Sn/CIGS hetero-junction. We also investigated the influence of the laser frequency of the PLD on the transmittance of Ga2O3:Sn and the quantum efficiency of this hetero-junction. Ga2O3:Sn film deposited at a 0.1-Hz laser repetition rate had higher transmittance than at a 10-Hz repetition rate. The Ga2O3:Sn/CIGS hetero-junction also had a higher quantum efficiency with the lower rate (50%) than with the higher rate (30%).


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Copyright
Copyright © Materials Research Society 2014 

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