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The Hysteresis Analysis of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode

Published online by Cambridge University Press:  01 February 2011

Jae-Hoon Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:jhlee@emlab.snu.ac.kr
Bong-Hyun You
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:jhlee@emlab.snu.ac.kr
Kwang-Sub Shin
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:jhlee@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:jhlee@emlab.snu.ac.kr
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Abstract

An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is reported. The different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer (HP4156B) has also been controlled to investigate the effect between the detrapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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