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Hybrid Integration of III-V Optoelectronic Devices on Si Platform Using BCB

Published online by Cambridge University Press:  11 February 2011

Alex Katsnelson
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany – SUNY, Albany, NY 12203, U.S.A
Vadim Tokranov
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany – SUNY, Albany, NY 12203, U.S.A
Michael Yakimov
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany – SUNY, Albany, NY 12203, U.S.A
Matthew Lamberti
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany – SUNY, Albany, NY 12203, U.S.A
Serge Oktyabrsky
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany – SUNY, Albany, NY 12203, U.S.A
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Abstract

Integration of dense arrays of high frequency III-V photoemitters and photodetectors with Si platform is one of the challenging tasks for realization of novel chip-level optical interconnects. These interconnects require the resolution of numerous problems of compatibility of materials. Comparison of monolithic and hybrid integration technologies highlights the advantages of hybrid approaches for emitters highly sensitive to growth defects. A novel protocol for fabrication of III-V optoelectronic components on a Si platform is proposed. Reversed vertical cavity surface emitting laser (VCSEL) structures were grown homoepitaxialy by MBE on a GaAs substrate, and then bonded to a Si wafer using a benzocyclobutene (BCB) polymer. The GaAs substrate was subsequently removed by selective etching down to an AlAs etch stop layer. This reduces thermal stresses in order to enhance the optoelectronic device performance and increase lifetime. A 10 μm-thick high frequency VCSEL with coplanar metallization is processed on Si with PMGI reflow planarization. Electro-luminescence spectrum, I-V and P-T characteristics were measured and compared with a reference structure. It was found that measured thermal resistance is about five times higher than for devices on a host GaAs wafer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

1. Oktyabrsky, S., Castracane, J., and Kaloyeros, A., Emerging Technologies for Chip-Level Optical Interconnects. Proc. SPIE, 4652, 213 (2002).CrossRefGoogle Scholar
2. Joshkin, V., Orlikovsky, A., Oktyabrsky, S., Dovidenko, K., Kvit, A., Muhamedzanov, I. and Pashaev, E., J. Cryst. Growth 147, 13 (1995)CrossRefGoogle Scholar
3. Sudersena Rao, T., Nozawa, K., and Horikoshi, Y., Appl. Phys Lett. 62, 154 (1993)Google Scholar
4. De Boeck, J., Demeester, P., and Borghs, G., J. Vac. Sci. Technol. A 12, 995 (1994)CrossRefGoogle Scholar
5. Beam, E.A. and Kao, Y.C., J. Appl. Phys. 69, 4253 (1991)CrossRefGoogle Scholar
6. Yablonovitch, Eli, Gmitter, T., Harbison, J. P., and Bhat, R., Appl. Phys. Lett. 51, 2222 (1987)CrossRefGoogle Scholar
7. Kim, Jong-Hee, Lim, Dae Ho, and Yang, Gye Mo. J. Vac. Sci. Technol. B 16, 558 (1998)CrossRefGoogle Scholar
8. Moon, Eun-A, Lee, Jong-Lam, and Yoo, Hyung Mo, J. Appl. Phys. 84, 3933 (1998)CrossRefGoogle Scholar
9. Matsuo, S., Tateno, K., Nakahara, T., Tsuda, H. and Kurokawa, T., Electron. Lett. 22, 1148 (1997)CrossRefGoogle Scholar
10. Funato, Mitsuru, Fujita, Shizuo, and Fujita, Shigeo, Appl. Phys. Lett. 77, 3959 (2000)CrossRefGoogle Scholar
11. Ebeling, Karl Joachim, “Analysis of vertical cavity surface emitting laser diodes (VCSEL)“, Semiconductor quantum optoelectronic, ed. Miller, A., Ebrahimzeden, E. and Finlayson, D.M., (A NATO Advanced Study Institute, 1998), pp. 295338 Google Scholar

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