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Highly Reliable WGe Ohmic Contact to GaAs-AlGaAs HBTs

Published online by Cambridge University Press:  22 February 2011

T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
B. Tseng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
L. R. Harriott
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
E. Lane
Affiliation:
AT&T Bell Laboratories. Breiningville, PA.
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Abstract

We report a highly reliable, sputtered WGe emitter contact for npn heterojunction bipolartransistors. A specific contact resistance of 7.5 × 10−7 Ω-cm2 and a transfer resistance of 4.0 × 10−2 Ωmm were obtained after 380°C, 1 min alloy. The contact was patterned by SF6 dry etching at low bias using a Au mask. This novel contact has comparable resistance to conventional AuGe-based metallization while having superior thermal stability. We have studied the dependence of contact properties on the post-deposition annealing conditions by transfer length method of electrical characterization and Auger analysis, and will also report long-term reliability results in comparison to AuGe-based metallization.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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