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High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation

Published online by Cambridge University Press:  15 March 2011

Jörg K.N. Lindner
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
Stephanie Wenzel
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
Bernd Stritzker
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
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Abstract

High-dose titanium implantations have been performed into ion beam synthesized heteroepitaxial layer systems of Si/3C-SiC/Si(100) in order to study the formation of titanium silicide layers in the silicon top layer. The structure and composition of layers was analysed using RBS, XRD, XTEM and EFTEM. The sputtering rates of 180 keV Ti ions were determined using the lower SiC/Si interface as a marker. A homogeneous surface layer with the stoichiometry of TiSi2 was formed by a nearly stoichiometric implantation and subsequent annealing. The formation of more metal-rich silicides was observed at doses where the peak Ti concentration largely exceeds the TiSi2 stoichiometry and where the total amount of Ti atoms in the top layer is greater than the amount needed to convert the entire Si top layer into TiSi2. Under these conditions, strong solid state reactions of the implanted Ti atoms with the buried SiC layer and the silicon substrate are observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1. See e.g. Proceedings of the 11th Int. Conf. on Silicon Carbide and Related Materials 1999, October 10-15, 1999, Research Triangle Park, NC, USA.Google Scholar
2. Murarka, S.P., Silicides for VLSI Applications, Academic Press, Orlando 1983.Google Scholar
3. Parsons, J.D., Kruaval, G.B., Chadda, A.K., Appl. Phys. Lett. 65 (1994) 2075.CrossRefGoogle Scholar
4. Lindner, J.K.N., Baba, K., Hatada, R., Stritzker, B., Nucl. Instr. and Meth. B 148 (1999) 551 CrossRefGoogle Scholar
5. Lindner, J.K.N., Stritzker, B., Nuclear Instr. and Meth. B 147 (1999) 249; ibid. B 148 (1999) 528 and refs. within.CrossRefGoogle Scholar
6. Götz, B., Lindner, J.K.N., Stritzker, B., Nucl. Instr. and Meth. B127/128 (1997) 333.CrossRefGoogle Scholar
7. Ziegler, J.F., Biersack, J.P., Littmark, U., in: Ziegler, J.F. (ed.), The Stopping and Range of Ions in Matter, vol. 1, Pergamon Press, New York, 1985.Google Scholar
8. Powder Diffraction Files: # 35-0785 (C54-TiSi2); # 23-1079 (Ti5Si4); # 17-0424 (TiSi).Google Scholar
9. Lindner, J.K.N., Wenzel, S., Schmid, M., Stritzker, B., publication in preparation.Google Scholar
10. e.g. Seo, Y.H. et al. , Mater. Sci. Forum Vols. 264–268 (1998) 199 and refs. within.CrossRefGoogle Scholar

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High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation
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