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High-Dielectric Constant Insulators and the AMLCD Process: Is Amorphous BST a Candidate?

Published online by Cambridge University Press:  10 February 2011

P. Andy
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
D. Neumayer
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
P. Duncombe
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
C. Dimitrakopoulos
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
F. Libsch
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
R. Laibowitz
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
A. Grill
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
R. Wisnieff
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
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Abstract

As the active matrix flat panel market continues to grow, manufacturers are constantly looking for ways of gaining an advantage in the marketplace typically through increased performance, expanded functionality and/or reduced cost. The continuing trend of larger panel sizes and higher resolution poses interesting challenges for manufacturers in the areas of image quality and brightness. In particular, it has been clearly shown that as pixel dimensions shrink, relative crosstalk coupling coefficients increase while the area available for pixel electrodes and storage capacitors (Cδ,t) decreases, so that charge compensation drive schemes must be employed to eliminate visual artifacts. One approach to minimizing crosstalk and flicker is to increase Cδ,t, however this requires increased pixel area, usually at the expense of brightness due to smaller aperture ratio. Depending on design and process flow, it may be possible to replace the typical Cδ,t, insulator, SiNx:H, with a material of higher dielectric constant thereby vastly improving electrical performance without sacrificing brightness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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