Skip to main content Accessibility help
×
Home

High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses

Published online by Cambridge University Press:  22 February 2011

Ph. Maurel
Affiliation:
THOMSON-CSF/LCR, Domaine de Corbeville, 91404 Orsay Cedex, France
J.C. Garcia
Affiliation:
THOMSON-CSF/LCR, Domaine de Corbeville, 91404 Orsay Cedex, France
J.P. Hirtz
Affiliation:
THOMSON-CSF/LCR, Domaine de Corbeville, 91404 Orsay Cedex, France
E. Vassilakis
Affiliation:
THOMSON-CSF/TCS, BP 46, 91401 Orsay Cedex, France
M. Baldy
Affiliation:
THOMSON-CSF/LCR, Domaine de Corbeville, 91404 Orsay Cedex, France
A. Parent
Affiliation:
THOMSON-CSF/TCS, BP 46, 91401 Orsay Cedex, France
C. Carriere
Affiliation:
THOMSON-CSF/TCS, BP 46, 91401 Orsay Cedex, France
Get access

Abstract

GaInAs/GaAs/GaInP multiquantum well laser structures have been grown by chemical beam epitaxy (CBE) using conventional sources (hydrides as group V element sources). Large area lasers were photolitographically defined and mounted for continuous wave (CW) measurements. CW output power levels of 600 mW at 25°C are reported from 100 μm wide, 300 μm long laser diodes without any facet treatment. At these levels, the delivered current is 2A, with an associated voltage of less than 1.7 V. The characteristic temperature of the structure is 95 K.

The same structures were then grown using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP). The large area laser diodes were characterized under pulsed conditions. For a 300 μm long cavity, threshold current density of 390 A/cm2 and external quantum efficiency of 0.6 W/A (2 facets) were obtained, demonstrating the suitability of TBP and TBAs as substitutes of arsine and phosphine in chemical beam epitaxy for laser fabrication.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below.

References

[1] Laporta, P., Taccheo, S., Svelto, O., Electron. Lett., 28, 490 (1992).Google Scholar
[2] Wang, C.A., Choi, H.K., IEEE J. Quantum Elec., 27, 681 (1991).CrossRefGoogle Scholar
[3] Fukagai, K., Ishikawa, S., Endo, K., Yuasa, T., Jpn. J. Appl. Phys., 30, L371 (1991)Google Scholar
[4] Tang, W.C., Rosen, H.J., Vettiger, P., Webb, D.J., Appl. Phys. Lett., 59, 1005 (1991).CrossRefGoogle Scholar
[5] Zhang, G., Nappi, J., Vanttinen, K., Asonen, H., Pessa, M., Appl. Phys. Lett., 61, 96 (1992).CrossRefGoogle Scholar
[6] Liau, Z.L., Palmateer, S.C., Groves, S.H., Walpole, J.N., Missaglia, L.J., Appl. Phys. Lett., 60, 6 (1992).CrossRefGoogle Scholar
[7] Tsang, W.T., Kapre, R., Wu, M.C., Chen, Y.K., Appl. Phys. Lett., 61, 755 (1992).Google Scholar
[8] Mobarhan, K., Razeghi, M., Marquebielle, G., Vassilakis, E., J. Appl. Phys., 72, 4447, (1992).Google Scholar
[9] Ogasawara, M., Sato, K., Kondo, Y., Appl. Phys. Lett., 60, 1217 (1992).Google Scholar
[10] Kim, T.S., Bayraktaroglu, B., Henderson, T.S., Plumton, D.L., Appl. Phys. Lett., 58, 1997 (1991).Google Scholar
[11] Ougazzaden, A., Mellet, R., Gao, Y., Kazmierski, K., Rhein, C., Mircea, A., Electron. Lett., 27, 1005 (1991).Google Scholar
[12] Ritter, D., Panish, M.B., Hamm, R.A., Gershoni, G., Brener, I., Appl.Phys.Lett., 56, 1448 (1990).Google Scholar
[13] Hincelin, G., Zahouh, M., Mellet, R., Pougnet, A.M., J. Crystal Growth,, 120, 119 (1992).Google Scholar
[14] Yamada, N., Roos, G., Harris, J.S., Appl. Phys. Lett., 59, 1040 (1991).Google Scholar
[15] Ph. Maurel, Nagle, J., Hirtz, J.P. to be published in Jpn. J. Appl. Phys. (march 1993)Google Scholar
[16] Garcia, J.C., Regreny, Ph., Delage, S., Blanck, H., Hirtz, J.P., Proceeding of the 7th international MBE conference, Stuttgart (1992), to be published in J. Crystal Growth (1993)Google Scholar
[17] Kothiyal, G.P., Bhattacharya, P., J. Appl. Phys., 63, 2760 (1988).Google Scholar
[18] Chen, T.R., Zhao, B., Zhuang, Y.H., Yariv, A., Ungar, J.E., Oh, S., Appl. Phys. Lett., 60, 1782 (1992).Google Scholar
[19] Maurel, Ph., Garcia, J.C., Regreny, Ph., Hirtz, J.P., Vassilakis, E., Parent, A., Baldy, M., Carrire, C., Electron. Lett., 29, 91 (1993).Google Scholar
[20] Garcia, J.C., Maurel, Ph., Hirtz, J.P., Electron. Lett., 29, 432 (1993).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 8 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 24th January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-9l59n Total loading time: 0.392 Render date: 2021-01-24T04:00:52.884Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *