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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

Published online by Cambridge University Press:  01 February 2011

Francesco La Via ,
Giuseppa Galvagno ,
Andrea Firrincieli ,
Salvatore Di Franco ,
Andrea Severino ,
Stefano Leone ,
Marco Mauceri ,
Giuseppe Pistone ,
Giuseppe Abbondanza  and
Ferdinando Portuese
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Francesco La Via
Affiliation:
francesco.lavia@imm.cnr.it, CNR-IMM, SiC growth, Stradale Primosole 50, 95121, Catania, N/A, N/A, Italy, ++39 095 5968229, ++39 095 5968312
Giuseppa Galvagno
Affiliation:
ggalvagno@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Firrincieli
Affiliation:
afirry@gmail.com, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Salvatore Di Franco
Affiliation:
salvatore.difranco@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Severino
Affiliation:
andrea.severino@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Stefano Leone
Affiliation:
s.leone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Marco Mauceri
Affiliation:
m.mauceri@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Pistone
Affiliation:
g.pistone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Abbondanza
Affiliation:
g.abbondanza@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Ferdinando Portuese
Affiliation:
portuese@tin.it, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Lucia Calcagno
Affiliation:
lucia.calcagno@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
Gaetano Foti
Affiliation:
gaetano.foti@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
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Abstract

The growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.

Keywords

epitaxysemiconductingchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B02-01
Copyright
Copyright © Materials Research Society 2006

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References

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