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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

Published online by Cambridge University Press:  01 February 2011

Francesco La Via
Affiliation:
francesco.lavia@imm.cnr.it, CNR-IMM, SiC growth, Stradale Primosole 50, 95121, Catania, N/A, N/A, Italy, ++39 095 5968229, ++39 095 5968312
Giuseppa Galvagno
Affiliation:
ggalvagno@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Firrincieli
Affiliation:
afirry@gmail.com, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Salvatore Di Franco
Affiliation:
salvatore.difranco@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Severino
Affiliation:
andrea.severino@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Stefano Leone
Affiliation:
s.leone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Marco Mauceri
Affiliation:
m.mauceri@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Pistone
Affiliation:
g.pistone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Abbondanza
Affiliation:
g.abbondanza@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Ferdinando Portuese
Affiliation:
portuese@tin.it, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Lucia Calcagno
Affiliation:
lucia.calcagno@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
Gaetano Foti
Affiliation:
gaetano.foti@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
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Abstract

The growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Karoda, N., Shibahara, K., Yoo, W.S., Nishino, S., Mastunami, H., Extended Abstract, 19th Conference on Solid State Devices and Materials, Tokio, 1987, 227.Google Scholar
[2] Crippa, D., Valente, G.L., Ruggiero, A., Neri, L., Reitano, R., Calcagno, L., Foti, G., Mauceri, M., Leone, S., Pistone, G., Abbondanza, G., Abbagnale, G., Veneroni, A., Omarini, F., Zamolo, L., Masi, M., Roccaforte, F., Giannazzo, F., Franco, S. Di and Via, F. La, Mat. Sci. Forum, 2005, 483–485, 67. CrossRefGoogle Scholar
[3] Myers, R. L., Kordina, O., Rao, S., Everly, R., and Saddow, S. E., Materials Science Forum 2005, 483–485, 73. Google Scholar
[4] Via, F. La, Galvagno, G., Roccaforte, F., Ruggiero, A., Calcagno, L., Appl. Phys. Lett., 2005 87(14), 142105.CrossRefGoogle Scholar

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