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Hf-Immersion Inductively Coupled Carrier Lifetime Characterization of Furnace-Oxide Growth

Published online by Cambridge University Press:  21 February 2011

T. Boone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
G. S. Higashi
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Benton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. C. Kistler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
G. R. Weber
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. C. Keller
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
G. Makris
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Metal contamination of silicon substrates can lead to yield and reliability problems with gate-oxides. Carrier recombination is extremely sensitive to the presence of metals. In this study, the HF-immersion inductively-coupled carrier lifetime measurement is used to isolate contamination effects arising from typical furnace-oxidation processes commonly used in integrated-circuit manufacture. The dry-oxidation processes, commonly employed in gateoxidation, are essentially contamination free. The steam-oxidation process employed in fieldoxidation can cause severe lifetime degradation (1 ms → 30 μs). The contaminant in our particular steam-oxidation tube has been identified by deep-level transient spectroscopy to be Fe at a level of ∼ 4 × 1011 cm−3.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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