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Heteroepitaxy of Gallium Arsenide on Germanium Coated Silicon Substrates
Published online by Cambridge University Press: 25 February 2011
Abstract
Single crystalline epitaxial GaAs layers have been grown on silicon substrates with a thin germanium interlayer. All semiconductor layers were deposited by the chemical vapor deposition technique. The surface condition of the silicon substrate is an important factor affecting the quality of GaAs/Ge films on silicon. P+/n homojunction solar cells of 0.25 cm2 area with an AM1 efficiency near 12% have been prepared.
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