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Heat-Treatment Induced Defects in Cz-Silicon
Published online by Cambridge University Press: 03 September 2012
Abstract
Positron lifetime results show that vacancies can be retained after growth of Czochralski silicon at concentrations of ∼x1016/cm3. Rapid thermal annealing as well as furnace annealing increase the vacancy concentration. The vacancies are predominantly trapped by oxygen interstitial clusters in lightly B-doped materials, and these complexes appear to have temperature dependent configurations which can be quenched-in by rapid cooling. Heavy Sb doping results in trapping of vacancies by the Sb impuritie
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- Copyright © Materials Research Society 1992
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