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Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD

Published online by Cambridge University Press:  31 January 2011

Goksel Durkaya
Affiliation:
goksel@phy-astr.gsu.edu, Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Mustafa Alevli
Affiliation:
mustafa@phy-astr.gsu.edu, Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Max Buegler
Affiliation:
mbuegler@phy-astr.gsu.edu, Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Ramazan Atalay
Affiliation:
atalay@phy-astr.gsu.edu, Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Sampath Gamage
Affiliation:
gamage@phy-astr.gsu.edu, Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
Martin Kaiser
Affiliation:
mkaiser@phy-astr.gsu.edu, Technical University Berlin, Institute of Solid State Physics, Berlin, Berlin, Germany
Ronny Kirste
Affiliation:
rkirste@physik.tu-berlin.de, Technical University Berlin, Institute of Solid State Physics, Berlin, Berlin, Germany
Axel Hoffmann
Affiliation:
hoffmann@physik.tu-berlin.de, Technical University Berlin, Institute of Solid State Physics, Berlin, Berlin, Germany
Muhammad Jamil
Affiliation:
jamil@ece.gatech.edu, University of North Carolina at Charlotte, School of ECE, Charlotte, North Carolina, United States
Ian Ferguson
Affiliation:
ianf@uncc.edu, University of North Carolina at Charlotte, School of ECE, Charlotte, North Carolina, United States
Nikolaus Dietz
Affiliation:
ndietz@gsu.edu, Georgia State University, Department of Physics & Astronomy, Atlanta, Georgia, United States
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Abstract

The influence of the growth temperature on the phase stability and composition of single-phase In1-xGaxN epilayers has been studied. The In1-xGaxN epilayers were grown by high-pressure Chemical Vapor Deposition with nominally composition of x = 0.6 at a reactor pressure of 15 bar at various growth temperatures. The layers were analyzed by x-ray diffraction, optical transmission spectroscopy, atomic force microscopy, and Raman spectroscopy. The results showed that a growth temperature of 925°C led to the best single phase InGaN layers with the smoothest surface and smallest grain areas

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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